3360a phase control thyristors hockey puk version st3230c..r series 1 bulletin i25200 rev. b 04/00 www.irf.com features double side cooling high surge capability high mean current fatigue free typical applications dc motor controls controlled dc power supplies ac controllers i t(av) 2785 a @ t c 80 c i t(av) 3360 a @ t hs 55 c i t(rms) 5970 a @ t hs 25 c i tsm @ 50hz 61200 a @ 60hz 64000 a i 2 t@ 50hz 18730 ka 2 s @ 60hz 17000 ka 2 s v drm /v rrm 1000 to 1800 v t q typical 500 s t j max. 125 c parameters st3230c..r units major ratings and characteristics (r-puk)
st3230c..r series 2 bulletin i25200 rev. b 04/00 www.irf.com voltage v drm /v rrm , max. repetitive v rsm , maximum non- i drm /i rrm max. type number code peak and off-state voltage repetitive peak voltage @ t c = 125 c vvma 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 electrical specifications voltage ratings i t(av) max. average on-state current 2785 (1720) a @ case temperature 80 c i t(av) max. average on-state current 3360 (1360) a @ heatsink temperature 55 (85) c i t(rms) max. rms on-state current 5970 a dc @ 25 c heatsink temperature double side cooled i tsm max. peak, one-cycle no voltage non-repetitive surge current reapplied 50% v rrm reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing no voltage initial t c = 125 c reapplied 50% v rrm reapplied v t(to) max. value of threshold voltage 0.92 v t j = t j max. r t max. value of on-state slope resistance v tm max. on-state voltage 1.3 v i pk = 2900a, t c = 25 c i l typical latching current 300 ma t j = 25 c, v d = 5v parameter st3230c..r units conditions on-state conduction a ka 2 s 0.09 t j = t j max. m ? 180 conduction, half sine wave double side (single side [anode side]) cooled parameter st3230c..r units conditions di/dt max. repetitive 50hz (no repetitive) from 67% v drm to 1000a gate drive 10v, 5 ? , t r = 0.5s rate of rise of turned-on current to 1a, t j = t j max. gate drive 30v, 15 ? , v d = 67% v drm , t j = 25 c rise time 0.5s i t = 1000a, t p = 1ms, t j = t j max, v rm = 50v, di rr /dt = 2a/s, v dr = 67% v drm , dv dr /dt = 8v/s linear 150 (300) a/s s t q typical turn-off time 500 t d maximum delay time 4.5 t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms 61200 64000 49000 51300 18730 17000 12000 10920 st3230c..r 250 switching
st3230c..r series 3 bulletin i25200 rev. 04/00 www.irf.com dv/dt maximum linear rate of rise of off-state voltage i rrm max. peak reverse and off-state i drm leakage current 500 v/s t j = t j max. to 67% rated v drm parameter st3230c..r units conditions 250 ma t j = 125 c rated v drm /v rrm applied triggering p gm maximum peak gate power 150 t p = 100s p g(av) maximum average gate power 10 i gm max. peak positive gate current 30 a anode positive with respect to cathode v gm max. peak positive gate voltage 30 v anode positive with respect to cathode -v gm max. peak negative gate voltage 0.25 v anode negative with respect to cathode i gt maximum dc gate current required to trigger v gt maximum gate voltage required to trigger parameter st3230c..r units conditions w 400 ma t c = 25 c, v drm = 5v 4vt c = 25 c, v drm = 5v v gd dc gate voltage not to trigger 0.25 v t c = 125 c max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated v drm anode-to-cathode applied 180 0.0010 0.0010 t j = t j max. 120 0.0017 0.0017 k/w 60 0.0044 0.0044 ? r thj-c conduction (the following table shows the increment of thermal resistence r thj-c when devices operate at different conduction angles than dc) conduction angle single side double side units conditions t j max. max. operating temperature 125 on-state (conducting) t stg max. storage temperature range -55 to 125 r thj-c thermal resistance, junction 0.019 dc operation single side cooled to case 0.0095 dc operation double side cooled r th(c-h) thermal resistance, case 0.004 single side cooled to heatsink 0.002 double side cooled f mounting force 10% wt approximate weight 1600 g case style (r-puk) see outline table parameter st3230c..r units conditions thermal and mechanical specification c clamping force 43kn with mounting compound 43000 (4400) n (kg) blocking k/w k/w
st3230c..r series 4 bulletin i25200 rev. b 04/00 www.irf.com ordering information table device code 5 1 2 3 4 st 323 0 c 18 r 1 7 6 8 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 - c = ceramic puk 5 - voltage code: code x 100 = v rrm (see voltage rating table) 6 - r = puk case 7 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 8 - critical dv/dt: none = 500v/sec (standard selection) l = 1000v/sec (special selection) outline table (r-puk) all dimensions in millimeters (inches) 112.5 (4.4) dia. max. 73.2 (2.9) dia. max. two places gate 1.5 (0.06) dia. 37.7 (1.5 ) max. anode 3.7 (0.15) dia. nom. x 2.1 (0.1) deep min. both ends cathode hole 1.5 (0.06) dia. max. 4.76 (0.2) 20 5 6 . 3 ( 0 . 2 4 ) quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification)
st3230c..r series 5 bulletin i25200 rev. b 04/00 www.irf.com fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 4 - on-state voltage drop characteristics 20 30 40 50 60 70 80 90 10 0 11 0 12 0 13 0 0 500 1000 1500 2000 2500 3000 3500 60 1 20 1 80 a vera g e o n -sta te c urre nt (a ) cond uction angle maxim um allowable heatsink tem perature (c) dc st 3230c ..r se ries (single side cooled) r (d c ) = 0.023 k/w th j-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 60 120 180 average on-state current (a) conduction angle maximum allowable heatsink temperature ( c) st3230c..r series (double side cooled) r (dc) = 0.0115 k/w th j-hs dc 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 1000 2000 3000 4000 5000 6000 rms limit con duction angle maximum average on-state power loss (w) average on-state current (a) st3230c..r series t = 125 c j dc 180 120 60 fig. 3 - on-state power loss characteristics 10 0 1000 10000 0.511.52 in s ta n ta n e ou s o n -st a te c u rren t (a) in sta n ta ne ous o n-sta te vo lta g e (v ) t = 125 c j st3 230c ..r se rie s 15000 20000 25000 30000 35000 40000 45000 50000 55000 110100 number of equal amplitude half cycle current pulses (n) peak half sine w ave on-state current (a) initia l t = 1 25 c @ 60 hz 0.0 083 s @ 50 hz 0.0 100 s j st32 30c ..r se rie s at any rated load condition and with 5 0 % r a t e d v a p p li e d f o ll o w in g s u rg e rr m 40000 50000 60000 70000 80000 90000 100000 110 m a xim um n on re pe titiv e surg e c urre nt v ersus p ulse tra in d ura tio n. c o ntro l o f c on d u ctio n m a y n o t be m a in ta in e d . peak half sine w ave on-state current (a) 50% rate d v reapplie d rrm st3230c ..r se rie s initia l t = 12 5 c j pulse tra in d ura tio n (m s)
st3230c..r series 6 bulletin i25200 rev. b 04/00 www.irf.com fig. 7 - stored charged fig. 8 - thermal impedance z thj-c characteristics fig. 9 - gate characteristics 100 1000 10000 0.1 1 10 100 tota l stor ed c har ge - q rr ( c ) rate of decay of on-state current - di/dt (a/s) t = 125 c j st3230c ..r se rie s i = 1000a t q rr i t di i ( rec ) rm t dt t t = 3ms p 0.00 01 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 sq uare w a ve p ulse d ura tion (s) ste ad y sta te va lue r = 0.019 k/w (single side coo le d) r = 0.0095 k/w (d ouble side co ole d) (d c o pe ration) thj-c thj-c thj- c transie nt therm al im pe danc e z (k/w ) st3230c ..r series 0.1 1 10 100 0.001 0.01 0.1 1 10 vg d ig d tj=25 c tj=1 25 c tj=-40 c (1) (2) insta n ta ne ous g a te c urrent (a) instanta neo us g ate vo ltag e (v) frequency limited by pg(av) (1) pg m = 2w (2) pg m = 4w (3) pg m = 8w (4) pg m = 20w (5) pg m = 50w (6) pg m =100w d e vic e: st3230c..r se ries (3) (4) (5) (6)
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